Structure variation effects on device reliability of single photon avalanche diodes

Article history: Received 21 May 2017 Received in revised form 19 June 2017 Accepted 9 July 2017 Available online 15 July 2017 Single photon avalanche diode (SPAD) is one of the promising candidates among photodetectors due to its high sensitivity and accuracy. Alongwith the existing custom compound avalanche diodes, SPADs fabricated in CMOS technology have been suggested and studied widely due to its advantage in manufacturing cost and system integration capability. Since SPAD is the core device in photodetector module and can be applied to the usage of the autonomous driving system, the reliability of SPADs should be addressed and studied. In this paper, the device reliability and temperature dependence of SPADs varying the different device structures are investigated and the relationship between device structure and device characteristics is also discussed with modeling and simulation. © 2017 Elsevier Ltd. All rights reserved.